2sj665 no.8590-1/7 1 : gate 2 : drain 3 : source 4 : drain sanyo : to-263-2l 10.0 5.3 1.27 0.8 2.54 2.54 13.4 9.2 7.9 1.4 1.2 0 to 0.25 2.4 1.75 0.9 3.0 1.35 0.254 4.5 8.0 1.3 0.5 123 4 product & package information ? package : to-263-2l ? jeita, jedec : sc-83, to-263 ? minimum packing quantity : 800 pcs./reel packing type: dl marking electrical connection features ? on-resistance r ds (on)1=59m (typ.) ? input capacitance ciss=4200pf (typ.) ? 4v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss --100 v gate-to-source voltage v gss 20 v drain current (dc) i d --27 a drain current (pulse) i dp pw 10 s, duty cycle 1% --108 a allowable power dissipation p d tc=25c 65 w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 48 mj avalanche current *2 i av --27 a note : * 1 v dd =--30v, l=100 h, i av =--27a (fig.1) * 2 l 100 h, single pulse package dimensions unit : mm (typ) 7535-001 71112 tkim tc-00002779/n1805qa msim tb-00001098 sanyo semiconductors data sheet 2sj665 p-channel silicon mosfet general-purpose switching device applications http:// semicon.sanyo.com/en/network ordering number : EN8590A 2sj665-dl-1e 1 3 2, 4 j665 lot no. dl
2sj665 no.8590-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --100 v zero-gate voltage drain current i dss v ds =--100v, v gs =0v --1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.2 --2.6 v forward transfer admittance | yfs | v ds =--10v, i d =--14a 15 25 s static drain-to-source on-state resistance r ds (on)1 i d =--14a, v gs =--10v 59 77 m r ds (on)2 i d =--14a, v gs =--4v 75 105 m input capacitance ciss v ds =--20v, f=1mhz 4200 pf output capacitance coss 280 pf reverse transfer capacitance crss 220 pf turn-on delay time t d (on) see fig.2 30 ns rise time t r 150 ns turn-off delay time t d (off) 330 ns fall time t f 135 ns total gate charge qg v ds =--50v, v gs =--10v, i d =--27a 74 nc gate-to-source charge qgs 12.8 nc gate-to-drain ?miller? charge qgd 14.7 nc diode forward voltage v sd i s =--27a, v gs =0v --0.98 --1.2 v fig.1 avalanche resistance test circuit fig.2 switching time test circuit ordering information device package shipping memo 2sj665-dl-1e to-263-2l 800pcs./reel pb free 50 50 rg 0v --10v v dd l 2sj665 d.c. 1% pw=10 s p. g 50 g s d i d = --14a r l =3.57 v dd = --50v v out 2sj665 v in 0v --10v v in
2sj665 no.8590-3/7 r ds (on) -- v gs r ds (on) -- tc i d -- v ds i d -- v gs ciss, coss, crss -- v ds i s -- v sd sw time -- i d drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a gate-to-source voltage, v gs -- v case temperature, tc -- c static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m drain current, i d -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf source current, i s -- a it08792 it08793 it08790 it08791 -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 0 0 --10 --20 --30 --60 --50 --40 0 --10 --20 --30 --60 --50 --40 --50 --25 150 0 --30 --10 --15 --20 --25 -- 5 1000 100 10000 it08797 it08795 it08794 3 2 -- 3 -- 4 -- 5 -- 6 -- 7 -- 8 -- 9 --2 --10 0 140 60 80 100 120 40 20 0 140 60 80 100 120 40 20 --1.5 --1.0 --0.5 --2.0 --2.5 --3.0 0 --5.0 --4.5 --4.0 --3.5 0 25 50 75 100 125 7 5 2 3 7 5 --10v --6v tc=25 c 25 c --25 c 25 c tc= --25 c 75 c tc=75 c i d = --14a tc=75 c 25 c --25 c i d = --14a, v gs = --4v i d = --14a, v gs = --10v f=1mhz coss ciss crss it08796 --0.1 --1.0 23 57 23 57 23 57 --10 100 10 1000 3 5 7 2 2 3 5 7 t d (off) t f t d (on) t r v dd = --50v v gs = --10v v gs = --3v --4v v ds = --10v --0.1 --1.0 23 57 3 10 100 1.0 --1.5 --1.2 --0.6 --0.3 --0.9 0 --0.01 --0.1 --1.0 --10 --100 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 7 5 7 2 3 5 7 2 --10 23 57 7 35 2 tc= --25 c 75 c 25 c v ds = --10v tc=75 c 25 c --25 c v gs =0v diode forward voltage, v sd -- v | y fs | -- i d forward transfer admittance, | y fs | -- s
2sj665 no.8590-4/7 --0.1 --1.0 2 2 3 5 7 --10 2 3 5 7 23 57 2 --1.0 357 2 --10 --0.1 i dp = --108a(pw 10 s) i d = --27a 100 s 10 s 1ms 10ms 100ms dc operation operation in this area is limited by r ds (on). 357 2 --100 --100 2 3 5 7 it16904 a s o v gs -- qg p d -- tc total gate charge, qg -- nc gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a case temperature, tc -- c allowable power dissipation, p d -- w it08798 020 10 30 40 80 70 50 60 0 -- 2 -- 4 -- 6 -- 8 -- 9 -- 1 -- 3 -- 5 -- 7 --10 v ds = --50v i d = --27a it08758 0 0 20 40 60 80 100 120 60 70 65 50 140 160 40 30 20 10 tc=25 c single pulse
2sj665 no.8590-5/7 taping speci cation 2sj665-dl-1e
2sj665 no.8590-6/7 outline drawing land pattern example 2sj665-dl-1e mass (g) unit 1.5 * for reference mm unit: mm
2sj665 ps no.8590-7/7 this catalog provides information as of july, 2012. speci cations and information herein are subject to change without notice. note on usage : since the 2sj665 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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